Method of forming chalcopyrite light-absorbing layer
US9437761B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2014 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Apr 1, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
Abstract
Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe2 due to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.