Magnetoresistive element and magnetic memory
US9437810B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Feb 28, 2014 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Feb 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.