Silicon-on-insulator-based voltage generation circuit
US9438105B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2015 |
| Grant date | Sep 6, 2016 |
| Priority date | — |
| Expiry date | Jun 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/071
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A silicon-on-insulator (SOI) based positive/negative voltage generation circuit includes: an inverter including an NMOS transistor and a PMOS transistor, a first transfer capacitor coupled to the PMOS transistor, a first output capacitor, a second transfer capacitor coupled to the NMOS transistor, a second output capacitor, a first diode disposed between the first transfer capacitor and the first output capacitor, a second diode disposed between the second transfer capacitor and the second output capacitor, one end of the first output capacitor is coupled to the ground, one end of the second output capacitor is coupled to the ground; wherein an output voltage of the inverter is controlled by a single-phase clock to flip periodically, charge the first transfer capacitor through a parasitic diode of the PMOS transistor, and charge the second transfer capacitor through a parasitic diode of the NMOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.