Patent · US Active

Hafnium telluride layered compounds, transparent and electrically conductive film, and electronic devices including the same

US9440853B2 · kind B2 · utility

3Cited by
1References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 30, 2015
Grant dateSep 13, 2016
Priority date
Expiry dateMar 14, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01B1/02
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

A hafnium telluride compound includes a layered crystal structure and represented by the following Chemical Formula 1.Hf3Te2-xAx  [Chemical Formula 1]Herein, A is at least one selected from phosphorus (P), Arsenic (As), antimony (Sb), bismuth (Bi), sulfur (S) and selenium (Se), and 0<x≦1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.