Hafnium telluride layered compounds, transparent and electrically conductive film, and electronic devices including the same
US9440853B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Jan 30, 2015 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Mar 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B1/02
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A hafnium telluride compound includes a layered crystal structure and represented by the following Chemical Formula 1.Hf3Te2-xAx [Chemical Formula 1]Herein, A is at least one selected from phosphorus (P), Arsenic (As), antimony (Sb), bismuth (Bi), sulfur (S) and selenium (Se), and 0<x≦1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.