Patent · US Active

Piezoresistive boron doped diamond nanowire

US9441940B2 · kind B2 · utility

2Cited by
3References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 21, 2015
Grant dateSep 13, 2016
Priority date
Expiry dateJan 21, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01B7/18
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.