Edge electrode for characterization of semiconductor wafers
US9442133B1 · kind B1 · utility
1Cited by
15References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 2013 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Aug 3, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G3/006
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A conductive conformable braided wire is used as the edge electrode for material characterization of a semiconductor wafer. The braided wire is adapted to contact the perimeter of the n-GaN layer using a retractable support structure that alternately places the electrode in contact with the edge of the n-GaN layer and retracts it during repeated cycles of operation to test a plurality of similar wafers. The braided wire produced a very stable and higher electrical contact than any prior-art edge electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.