Optical-interface patterning for radiation detector crystals
US9442198B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2015 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Apr 21, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/2023
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A radiation detector is disclosed that includes a scintillation crystal and a plurality of photodetectors positioned to detect low-energy scintillation photons generated within the scintillation crystal. The scintillation crystals are processed using subsurface laser engraving to generate point-like defects within the crystal to alter the path of the scintillation photons. In one embodiment, the defects define a plurality of boundaries within a monolithic crystal to delineate individual detector elements. In another embodiment, the defects define a depth-of-interaction boundary that varies longitudinally to vary the amount of light shared by neighboring portions of the crystal. In another embodiment the defects are evenly distributed to reduce the lateral spread of light from a scintillation event. Two or more of these different aspects may be combined in a single scintillation crystal. Additionally, or alternatively, similar SSLE defects may be produced in other light-guiding elements of the radiation detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.