Method for processing silicon-based wire optical waveguide
US9442249B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Jan 20, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is provided for processing a silicon-based wire optical waveguide, by which an optical transmission loss of the silicon-based wire optical waveguide due to ion irradiation with high energy is suppressed, and an end portion of the silicon-based wire optical waveguide that is three-dimensionally curved in a self-aligning manner is obtained. According to the method a protective film is selectively formed on the silicon-based wire optical waveguide exclusive of the end portion of the silicon-based wire optical waveguide; and ions are implanted to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of the silicon-based wire optical waveguide to the particular direction in a self-alignment manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.