Mask blank for reflection-type exposure, and mask for reflection-type exposure
US9442364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Nov 22, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (11), a multilayer reflective film (12), a protective film (13), an absorption film (14), and a reverse-surface conductive film (15). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO2, TiO2, and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.