Semiconductor device
US9443880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Sep 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.