Image sensors having reduced interference between pixels
US9443898B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2015 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Jan 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.