Substrate for molecular beam epitaxy (MBE) HgCdTe growth
US9443923B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 7, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Aug 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure having a first semiconductor body having an upper surface with a non <211> crystallographic orientation and a second semiconductor body having a surface with a <211> crystallographic orientation, the surface of the second semiconductor body being bonded to a bottom surface of the first semiconductor body. A layer comprising CdTe is epitaxially disposed on the upper surface of the second semiconductor body. The second semiconductor body is CZ silicon, has a thickness less than 10 microns and has a diameter of at least eight inches. A getter having micro-cavities has a bottom surface formed on an upper surface of the first semiconductor body and has an upper surface bonded to a bottom surface of the second semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.