Method of fabricating fin-field effect transistors (finFETs) having different fin widths
US9443935B2 · kind B2 · utility
10Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 2, 2016 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Feb 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.