High electron mobility transistors including lightly doped drain regions and methods of manufacturing the same
US9443968B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2011 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Oct 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High electron mobility transistors (HEMTs) including lightly doped drain (LDD) regions and methods of manufacturing the same. A HEMT includes a source, a drain, a gate, a channel supplying layer for forming at least a 2-dimensional electron gas (2DEG) channel, and a channel formation layer in which at least the 2DEG channel is formed. The channel supplying layer includes a plurality of semiconductor layers having different polarizabilities. A portion of the channel supplying layer is recessed. One of the plurality of semiconductor layers, which is positioned below an uppermost layer is an etching buffer layer, as well as a channel supplying layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.