Hybrid CZTSSe photovoltaic device

US9443997B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Tayfun Gokmen · Briarcliff Manor, US
• Oki Gunawan · Westwood, US
• Richard A. Haight · Mahopac, US
• Jeehwan Kim · White Plains, US
• David B. Mitzi · Campion Road, US
• Mark T. Winkler · San Jose, US

Key dates

• Filing date: Jun 28, 2013
• Grant date: Sep 13, 2016
• Expiry date: Jun 28, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.