Process for forming light-emitting diodes

US9444010B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Hubert Bono · Grenoble, FR
• Bernard Andre · Grenoble, FR
• Adrien Gasse · Grenoble, FR

Key dates

• Filing date: Mar 14, 2014
• Grant date: Sep 13, 2016
• Expiry date: Mar 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/142

Abstract

The invention relates to a process for manufacturing light-emitting diodes comprising the following steps: a) forming light-emitting diodes (5) on a silicon layer (1) of an SOI wafer (1, 2, 3), said layer resting on a carrier (2, 3); b) bonding, on the light-emitting diode side, a silicon wafer forming a cap (7) equipped with a void facing each light-emitting diode; c) thinning the silicon wafer to form an aperture facing each light-emitting diode; d) filling each aperture with a transparent material (21, 23); and e) at least partially removing the carrier of the SOI wafer (3) and producing connecting and heat-sinking metallizations.