Semiconductor light emitting device with a film having a roughened surface
US9444017B2 · kind B2 · utility
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2References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Sep 9, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Sep 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side, and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. The film is provided between the second insulating film at the outer periphery and the optical layer. The film has a roughened surface on a side in contact with the optical layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.