Piezoelectric element and method of producing the same
US9444032B2 · kind B2 · utility
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31Claims
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Key dates
| Filing date | Jul 10, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Apr 6, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A piezoelectric element includes a substrate having a first surface with a predetermined orientation; a lower electrode layered on the first surface of the substrate; a piezoelectric thin film layered on the lower electrode and having a piezoelectric body; and an upper electrode layered on the piezoelectric thin film. A voltage is to be impressed between the lower electrode and the upper electrode to deform the piezoelectric thin film. The piezoelectric thin film is epitaxially grown on the lower electrode using a physical vapor deposition or a chemical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.