Magnetic memory device and method of manufacturing the same
US9444033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2014 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Jun 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic memory devices and methods of manufacturing the same are disclosed. A method may include forming a magnetic tunnel junction layer on a substrate, forming mask patterns on the magnetic tunnel junction layer, and sequentially performing a plurality of ion implantation processes using the mask patterns as ion implantation masks to form an isolation region in the magnetic tunnel junction layer. The isolation region may thereby define magnetic tunnel junction parts that are disposed under corresponding ones of the mask patterns. A magnetic memory device may include a plurality of magnetic tunnel junction parts electrically and magnetically isolated from each other through the isolation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.