Thin-layer encapsulation for an optoelectronic component, method for the production thereof, and optoelectronic component
US9444062B2 · kind B2 · utility
3Cited by
1References
11Claims
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Inventors
Key dates
| Filing date | Mar 22, 2010 |
| Grant date | Sep 13, 2016 |
| Priority date | — |
| Expiry date | Mar 22, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A thin-layer encapsulation (1) for an optoelectronic component. The thin-layer encapsulation (1) comprises a sequence of layers (2) that comprises the following layers: a first ALD layer (3) deposited by means of atomic layer deposition, and a second ALD layer (4) deposited by means of atomic layer deposition. A method is disclosed for producing the thin-layer encapsulation and an optoelectronic component is disclosed having such a thin-layer encapsulation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.