Patent · US Active

Thin-layer encapsulation for an optoelectronic component, method for the production thereof, and optoelectronic component

US9444062B2 · kind B2 · utility

3Cited by
1References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 22, 2010
Grant dateSep 13, 2016
Priority date
Expiry dateMar 22, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A thin-layer encapsulation (1) for an optoelectronic component. The thin-layer encapsulation (1) comprises a sequence of layers (2) that comprises the following layers: a first ALD layer (3) deposited by means of atomic layer deposition, and a second ALD layer (4) deposited by means of atomic layer deposition. A method is disclosed for producing the thin-layer encapsulation and an optoelectronic component is disclosed having such a thin-layer encapsulation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.