SOI substrate, physical quantity sensor, SOI substrate manufacturing method, and physical quantity sensor manufacturing method
US9446938B2 · kind B2 · utility
1Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2014 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Apr 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A capacitance type physical quantity sensor includes: a first substrate; and a second substrate bonded to the first substrate through an insulating film. The second substrate includes first and second groove portions at a place of the second substrate facing an end portion of the first and second support units formed on the first substrate on a side opposite to the movable unit. A part of the end portion of the first support unit protrudes over the first groove portion. A part of the end portion of the second support unit protrudes over the second groove portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.