Organic thin film transistor, organic semiconductor thin film, and organic semiconductor material
US9447111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Apr 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/636
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility and a small fluctuation of the threshold voltage after repeated driving. R1 to R12 represent a hydrogen atom or a substituent, provided that at least one of R1 to R12 represents a substituent represented by the formula (W), or all of R1 to R12 represent a hydrogen atom. * represents a position bonded to the naphthobisbenzofuran skeleton. L represents a single bond, a divalent linking group, an oligoethyleneoxy group having a repeating number of an ethyleneoxy unit of 2 or more, or an oligosiloxane group having 2 or more silicon atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.