Photoresist composition and method of manufacturing a thin film transistor substrate
US9448476B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 24, 2014 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Oct 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist composition includes about 0.1 to about 30 parts by weight of a photo-initiator, about 1 to 50 parts by weight of a first acrylate monomer including at least five functional groups, about 1 to 50 parts by weight of a second acrylate monomer including at most four functional groups with respect to about 100 parts by weight of an acryl-copolymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.