Method for setting a flash memory for HTOL testing
US9449718B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 10, 2014 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Jan 11, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for setting voltages in a flash memory for high temperature operating life (HTOL) testing is provided. The flash memory includes a substrate, a source, and a control gate. The method includes adjusting the voltages that are applied to the source, the control gate, and the substrate, such that there is no voltage difference between the control gate and the source, and no voltage difference between the control gate and the substrate. Specifically, adjusting the voltages includes setting the voltage that is applied to the source to a ground voltage, setting the voltage that is applied to the control gate to the ground voltage, and setting the voltage that is applied to the substrate to a power supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.