Manufacturing method for semiconductor device, annealing device, and annealing method
US9449848B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Aug 29, 2013 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Aug 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, the manufacturing method for the semiconductor device according to the embodiment includes carrying out ion implantation to the semiconductor layer and forming an amorphous layer on the surface of the semiconductor layer, and a heat treatment process using microwave annealing at a temperature higher than or equal to 200° C. and lower than or equal to 700° C. and single crystallizes the amorphous layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.