Local doping of two-dimensional materials

US9449851B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Dillon Wong · Alameda, US
• Jairo Velasco, Jr. · Berkeley, US
• Long Ju · Berkeley, US
• Salman Kahn · Tracy, US
• Juwon Lee · Yongin-si, KR
• Chad E. Germany · Richmond, US
• Alexander K. Zettl · Kensington, US
• Feng Wang · Export, US
• Michael F. Crommie · Oakland, US

Key dates

• Filing date: Aug 24, 2015
• Grant date: Sep 20, 2016
• Expiry date: Aug 24, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02568
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.