Transistor array structure
US9449967B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Sep 20, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/52
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor circuit can include a plurality of arrays of transistors having differing characteristics and operating at low voltages and currents. A drain line drive signal may provide a potential to a drain line to which a selected transistor is connected. A row of drain mux circuits can provide reduced leakage current on the drain line drive signal so that more accurate current measurements may be made. A gate line drive signal may provide a potential to a gate line to which the selected transistor is connected. A column of gate line mux circuits can provide a gate line low drive signal to unselected transistors to reduce leakage current in unselected transistors so that more accurate drain current measurements may be made to the selected transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.