Semiconductor devices and methods of forming the same
US9449970B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Aug 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/974
Abstract
A semiconductor device includes first and second gate structures extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, a third gate structure extending in the first direction and provided between the first and second gate structures, a first contact connected to the first gate structure and having a first width in the second direction, a second contact connected to the second gate structure and having a second width in the second direction, and a third contact connected to the third gate structure and having a third width in the second direction. The first, second, and third contacts may be aligned with each other in the second direction to constitute one row. The first and second widths may be greater than the third width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.