Low noise CdHgTe photodiode array

US9450013B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Laurent Mollard · Grenoble, FR
• Francois Boulard · Grenoble, FR
• Guillaume Bourgeois · Grenoble, FR

Key dates

• Filing date: Jul 9, 2015
• Grant date: Sep 20, 2016
• Expiry date: Jul 9, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/1253

Abstract

A planar photodiode array including a useful layer made of CdxHg1-xTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.