Stackable high-density metal-oxide-metal capacitor with minimum top plate parasitic capacitance
US9450041B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2013 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Mar 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system including first and second plurality of conductors stacked along a first axis on a substrate. The first axis is perpendicular to a plane on which the substrate lies. In the first and second plurality of conductors, each conductor is connected to an adjacent conductor by one or more first vias arranged along the first axis. The first and second plurality of conductors are arranged in parallel along a second axis (i) perpendicular to the first axis and (ii) parallel to the plane on which the substrate lies. The first plurality of conductors respectively lie on a plurality of planes (i) perpendicular to the first axis and (ii) parallel to the plane on which the substrate lies. The second plurality of conductors respectively lie on the plurality of planes. Capacitances are formed along the plurality of planes between the first plurality of conductors and the second plurality of conductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.