Method for manufacturing semiconductor device
US9450080B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2014 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Dec 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating film, oxygen is added to the first oxide semiconductor film, and then a second oxide semiconductor film is formed over the first oxide semiconductor film. Then, heat treatment is performed. Next, part of the first insulating film, part of the first oxide semiconductor film, and part of the second oxide semiconductor film are etched to form a first gate insulating film having a projection. Next, a pair of electrodes is formed over the second oxide semiconductor film, and a third oxide semiconductor film is formed over the second oxide semiconductor film and the pair of electrodes. Then, a second gate insulating film is formed over the third oxide semiconductor film, and a second gate electrode is formed over the second gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.