Method of manufacturing a photovoltaic device
US9450115B2 · kind B2 · utility
8Cited by
8References
17Claims
0Family size
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Key dates
| Filing date | Mar 14, 2014 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Mar 14, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor absorber layer prior to the deposition or formation of a back contact layer on the semiconductor absorber layer, the surface contaminants removed using at least one of a dry etching process and a wet etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.