Optoelectronic device having surface periodic grating structure
US9450117B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2014 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Nov 10, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present invention provides a optoelectronic device having a surface periodic grating structure and a manufacturing method thereof, which includes: a substrate; a multi-layer semiconductor structure layer formed on the substrate; and a periodic grating structure layer embedded in the multi-layer semiconductor structure layer by etching based on optimized parameters. A direction of an incident light to the optoelectronic device is changed to be resonant to the multi-layer semiconductor structure layer to enhance optoelectricity of the optoelectronic device. The method includes: (1) providing a substrate; (2) forming a multi-layer semiconductor structure layer on the substrate; (3) selecting parameters to perform a design for a periodic grating structure layer on a surface of the multi-layer semiconductor structure layer; and (4) forming the periodic grating structure layer embedded in the multi-layer semiconductor structure layer by etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.