Magnetoresistive sensor, related manufacturing method, and related electronic device
US9450178B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Mar 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for manufacturing a magnetoresistive sensor may include the following steps: forming a trench structure in a substrate, wherein the step of forming the trench structure comprises performing a wet etching process on a substrate material member, wherein the trench structure has a first side, a second side, and a third side, wherein the second side is connected through the first side to the third side, wherein the second side is at a first obtuse angle with respect to a side of the substrate, and wherein the third side is at a second obtuse angle with respect to the side of the substrate; forming a first magnetic element on the first side of the trench structure; forming a second magnetic element on the second side of the trench structure; and forming a third magnetic element on the third side of the trench structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.