Quantum dot SOA-silicon external cavity multi-wavelength laser
US9450379B2 · kind B2 · utility
13Cited by
27References
23Claims
0Family size
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Key dates
| Filing date | Feb 27, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Apr 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4062
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A hybrid external cavity multi-wavelength laser using a QD RSOA and a silicon photonics chip is demonstrated. Four lasing modes at 2 nm spacing and less than 3 dB power non-uniformity were observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10−9 BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.