Method of increasing MEMS enclosure pressure using outgassing material
US9452925B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Aug 21, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0792
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.