Photoelectrode including zinc oxide hemisphere, method of fabricating the same and dye-sensitized solar cell using the same
US9452929B2 · kind B2 · utility
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Key dates
| Filing date | May 31, 2012 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Nov 30, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/542
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are a photoelectrode including a zinc oxide hemisphere, a method of fabricating the same, and a dye-sensitized solar cell using the same. The photoelectrode includes a conductive substrate, a zinc oxide hemisphere disposed on the conductive substrate, and a porous metal oxide layer covering the zinc oxide hemisphere. Light scattering effects of photoelectrodes can be increased, and recombination losses of electrons can be minimized to improve photovoltaic properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.