Multifunctional nanoscopy for imaging cells
US9453809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2014 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Jan 11, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0019
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed herein is an apparatus comprising a metal shunt and a semiconductor material in electrical contact with the metal shunt, thereby defining a semiconductor/metal interface for passing a flow of current between the semiconductor material and the metal shunt in response to an application of an electrical bias to the apparatus, wherein the semiconductor material and the metal shunt lie in different planes that are substantially parallel planes, the semiconductor/metal interface thereby being parallel to planes in which the semiconductor material and the metal shunt lie, and wherein, when under the electrical bias, the semiconductor/metal interface is configured to exhibit a change in resistance thereof in response to a perturbation. Such an apparatus can be used as a sensor and deployed as an array of sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.