Molecular glass photoresists containing bisphenol a framework and method for preparing the same and use thereof

US9454076B2 · kind B2 · utility

Assignee

• Institute of Chemistry Chinese Academy of Sciences · CN

Inventors

• Guoqiang YANG · Nanjing, CN
• Jian Xu · Nanhu, CN
• Li Chen · Shanghai, CN
• Shuangqing Wang · Beijing, CN
• Shayu Li · Beijing, CN

Key dates

• Filing date: May 18, 2012
• Grant date: Sep 27, 2016
• Expiry date: Jun 24, 2032

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C07C2603/92
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.