Method for growing nitride-based semiconductor with high quality
US9455144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Sep 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for growing a nitride-based semiconductor with high quality, the method including: forming a first mask layer on a substrate and forming a second mask layer on the first mask layer; performing dry etching on the first mask layer and the second mask layer to form an opening in which a part of the substrate is exposed; performing selective wet etching on the first mask layer in the opening to form a recess in which a part of the substrate is exposed; depositing a third mask layer in the recess; and growing a nitride-based semiconductor from the exposed part of the substrate on sides of the third mask layer and expanding the growth via the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.