Contact hole formation methods
US9455177B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 31, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Aug 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming contact holes comprising: (a) providing a substrate comprising a plurality of post patterns over a layer to be patterned; (b) forming a hardmask layer over the post patterns and the layer to be patterned; (c) coating a pattern treatment composition over the hardmask layer, wherein the pattern treatment composition comprises a polymer comprising a reactive surface attachment group and a solvent; and optionally baking the substrate; wherein the polymer becomes bonded to the hardmask layer to form a polymer layer over the hardmask layer; and (d) treating the substrate with a rinsing agent comprising a solvent to remove residual, unbound said polymer, thereby forming a first hole disposed between a plurality of surrounding post patterns. The method is free of exposing the polymer to activating radiation from coating the pattern treatment composition to treating the substrate with the solvent. Also provided are pattern treatment compositions and electronic devices formed by the methods. The inventions find particular applicability in the manufacture of semiconductor devices for providing high resolution contact hole patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.