Pixel array of ultraviolet light emitting devices
US9455300B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Mar 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.