Methods for fabricating PNP bipolar junction transistors

US9455338B1 · kind B1 · utility

Assignee

• Altera Corporation · US

Inventors

• Albert Ratnakumar · San Jose, US
• Yanzhong Xu · Santa Clara, US

Key dates

• Filing date: Dec 14, 2012
• Grant date: Sep 27, 2016
• Expiry date: Jun 21, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/134

Abstract

Integrated circuits with bipolar transistors are provided. In one embodiment, a bipolar transistor may include an emitter region, a first base region that surrounds the emitter region, a collector region that surrounds the first base region, and a second base region that surrounds the collector region. Respective well taps may be formed within the emitter, collector, and the second base regions. A deep doped well having the same doping type as the base regions may extend beneath the emitter, collector, and base regions. In another embodiment, the bipolar transistor may include an emitter region, a base region that surrounds the emitter region, and a collector region that surrounds the base region. Respective well taps may be formed within the emitter, base, and collector regions. A deep doped well having the same doping type as the base region may extend beneath the emitter and only a portion of the base region.