Oxide semiconductor thin film transistor with reduced impurity diffusion
US9455349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2014 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Oct 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6736
Abstract
A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.