Sol-gel process for the manufacture of high power switches
US9455366B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | May 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1226
Abstract
According to one embodiment, a photoconductive semiconductor switch includes a structure of nanopowder of a high band gap material, where the nanopowder is optically transparent, and where the nanopowder has a physical characteristic of formation from a sol-gel process. According to another embodiment, a method includes mixing a sol-gel precursor compound, a hydroxy benzene and an aldehyde in a solvent thereby creating a mixture, causing the mixture to gel thereby forming a wet gel, drying the wet gel to form a nanopowder, and applying a thermal treatment to form a SiC nanopowder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.