Infra red detectors and methods of manufacturing infra red detectors using MOVPE
US9455369B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2015 |
| Grant date | Sep 27, 2016 |
| Priority date | — |
| Expiry date | Dec 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/123
Abstract
A method of forming infra red detector arrays is described, starting with the manufacture of a wafer. The wafer is formed from a GaAs or GaAs/Si substrate having CMT deposited thereon by MOVPE. The CMT deposited comprises a number of layers of differing composition, the composition being controlled during the MOVPE process and being dependent on the thickness of the layer deposited. Other layers are positioned between the active CMT layers and the substrate. A CdTe buffer layer aids the deposition of the CMT on the substrate and an etch stop layer is also provided. Once the wafer is formed, the buffer layer, the etch stop layer and all intervening layers are etched away leaving a wafer suitable for further processing into an infra red detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.