Process and device for forming a graphene layer
US9458020B2 · kind B2 · utility
1Cited by
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19Claims
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Key dates
| Filing date | May 6, 2013 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Jul 3, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/843
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.