Method for removing impurities from silicon

US9458294B2 · kind B2 · utility

Assignee

• Spawnt Private S.à.r.l. · LU

Inventors

• Norbert Auner · Eutin, DE
• Christian Bauch · Muldenstein, DE
• Sven Holl · Diez, DE
• Rumen Deltschew · Leipzig, DE
• Javad Mohsseni · Bitterfeld-Wolfen, DE
• Gerd Lippold · Leipzig, DE
• Thoralf Gebel · Dresden, DE

Key dates

• Filing date: Dec 6, 2010
• Grant date: Oct 4, 2016
• Expiry date: Nov 6, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P20/582
• WIPO field: Macromolecular chemistry, polymers
• WIPO sector: Chemistry

Abstract

A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiXn, where X is halogen, which may be partially replaced by hydrogen, and where 1<n<2.5, and C) heating the metallic silicon so that there is at least partly a reaction of the impurities with the at least one halogenated polysilane or with a decomposition product of the at least one halogenated polysilane, wherein C) may take place before, during and/or after B).