Patent · US Active

Method for directed self-assembly (DSA) of block copolymers using guiding line sidewalls

US9458531B2 · kind B2 · utility

0Cited by

6References

20Claims

0Family size

Assignee

HGST Netherlands, B.V. · NL

Inventors

Julia Cushen · San Francisco, US
Ricardo Ruiz · Santa Clara, US
Lei Wan · Beijing, CN

Key dates

Filing date	Nov 4, 2014
Grant date	Oct 4, 2016
Priority date	—
Expiry date	Dec 4, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/0002
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A guiding pattern for directed self-assembly (DSA) of a block copolymer (BCP) is an array of spaced guiding stripes on a substrate that have a width equal to nL0 and a pitch equal to (n+k)L0, where n and k are integers equal to or greater than 1 and L0 is the natural pitch of the BCP. The guiding stripes have oxidized sidewalls. A silicon-containing BCP self-assembles with the BCP component without silicon wetting the oxidized sidewalls. Then oxygen reactive ion etching (RIE) removes the BCP component without silicon and oxidizes the silicon-containing BCP component. The remaining pattern of silicon oxide containing BCP component can then be used as an etch mask to etch the underlying substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.