Vapor deposition method and vapor deposition apparatus
US9458532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2010 |
| Grant date | Oct 4, 2016 |
| Priority date | — |
| Expiry date | Nov 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/191
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention (i) uses a mask unit (80) including: a shadow mask (81) that has an opening (82) and that is smaller in area than a vapor deposition region (210) of a film formation substrate (200) and; a vapor deposition source (85) that has a emission hole (86) for emitting a vapor deposition particle, the emission hole (86) being provided so as to face the shadow mask (81), the shadow mask (81) and the vapor deposition source (85) being fixed in position relative to each other, (ii) adjusts an amount of a void between the shadow mask (81) and the film formation substrate (200), (iii) moves at least a first one of the mask unit (80) and the film formation substrate (200) relative to a second one thereof while uniformly maintaining the amount of the void between the mask unit (80) and the film formation substrate (200), and (iv) sequentially deposit the vapor deposition particle onto the vapor deposition region (210) through the opening (82) of the shadow mask (81). This makes it possible to form a high-resolution vapor deposition pattern on a large-sized substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.